Yazarlar: Emre Ozeren, Ilker Kalyoncu, Berktug Ustundag, Barbaros Cetindogan, Huseyin Kayahan, Mehmet Kaynak, Yasar Gurbuz

Sabancı Üniversitesi

Özet:

This letter presents an X-band power detector in a 0.25-μm SiGe BiCMOS technology which utilizes a novel technique, cascode configuration with diode connected PMOS load that provides high responsivity, high dynamic range and wideband input matching for various input powers. This configuration achieves a dynamic range of 52 dB, which is the highest dynamic range for a single stage X-band power detector to the best of author's knowledge. The total chip area is 0.42 mm2, including pads. Total power consumption is 7.2 mW. Results demonstrate that such a power detector can be used for built-in digital self calibration of X-band front-end circuits.

DOI: 10.1109/LMWC.2016.2597266

IEEE Microwave and Wireless Components Letters ( Volume: 26, Issue: 9, Sept. 2016 )